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IRHN8230 - TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0

IRHN8230_1256634.PDF Datasheet


Part No.	IRHN8230 IRHN7230
Description	TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0
File Size	450.04K / 14 Page
Maker	International Rectifier, Corp. IRF[International Rectifier]
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Full text search : TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0

Product Description search : TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0

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IRHN8230 package	IRHN8230 international	IRHN8230 Amplifier	IRHN8230 Silicon	IRHN8230 资料查找
IRHN8230 bit	IRHN8230 ohm	IRHN8230 output data	IRHN8230 pnp	IRHN8230 molex

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