PART |
Description |
Maker |
IRLR210 IRLR210A IRLR210ATF IRLR210ATM |
ADVANCED POWER MOSFET 200V N-Channel Logic Level A-FET / Substitute of IRLR210
|
Fairchild Semiconductor
|
IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A) -200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
IRF640 IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package HEXFET? Power MOSFET Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
IRF9640S IRF9640STRL IRF9640SPBF IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
|
IRF[International Rectifier]
|
IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
IRF9240 |
CAP CER 250VAC 100PF X7R 1808 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA -11A, -200V, 0.500 Ohm, P-Channel Power MOSFET -11A -200V 0.500 Ohm P-Channel Power MOSFET 11A/ -200V/ 0.500 Ohm/ P-Channel Power MOSFET
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|
IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)
|
International Rectifier, Corp.
|
IRF5Y31N20 |
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package POWER MOSFET N-CHANNEL(Vdss=200V, Rds(on)=0.092ohm, Id=18A*)
|
IRF[International Rectifier]
|
FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFI620G |
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.1A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.80ohm,身份证\u003d 4.1a的) Power MOSFET(Vdss=200V/ Rds(on)=0.80ohm/ Id=4.1A) HEXFET? Power MOSFET
|
International Rectifier, Corp. IRF[International Rectifier]
|
IRF630N IRF630NL IRF630NS |
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A) Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)
|
International Rectifier, Corp. IRF[International Rectifier]
|