| PART |
Description |
Maker |
| IDT70T3519 |
(IDT70T3519 - IDT70T3599) HIGH-SPEED 2.5V 256/128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM
|
IDT
|
| P80C58UFPN P80C58UBBB P87C51RC4A P87C51RC4B P87C51 |
80C51 8-bit microcontroller family 8K-64K/256-1K OTP/ROM/ROMless. low voltage 2.7V-5.5V). low power. high speed (33 MHz) 80C51位单片机系列8K-64K/256-1K检察官办公光盘/无ROM。低电压2.7V.5V）。低功耗。高速（33兆赫
80C51 8-bit microcontroller family 8K-64K/256-1K OTP/ROM/ROMless. low voltage 2.7V-5.5V). low power. high speed (33 MHz) 80C51位单片机系列8K-64K/256-1K检察官办公光盘/无ROM。低电压.7V.5V）。低功耗。高速（33兆赫
80C51 8-bit microcontroller family 8K.64K/256.1K OTP/ROM/ROMless/ low voltage 2.7V.5.5V/ low power/ high speed 33 MHz
(360.35 k)
80C51 8-bit microcontroller family 8K-4K/256-1K OTP/ROM/ROMless, low voltage (2.7V-5.5V), low power, high speed (33 MHz)
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| IDT70T659S8BF IDT70T659S8BC IDT70T659S8BFI IDT70T6 |
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 10ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 8ns
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 15ns
JFET-Input Operational Amplifier 14-SOIC -40 to 85 256K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 高.5V56/128K.3V 5011 2.5V的接口36 ASYNCHRONO美国双端口静RAM
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 256/128K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 128K X 36 DUAL-PORT SRAM, 12 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70 128K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
High-speed 2.5V 128 x 36 asynchronous dual-port static RAM, 12ns
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| P4C187-20CMB P4C187L-25CMB P4C187L-45JMB P4C187-45 |
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 25 ns, CDIP22
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 45 ns, PDSO24
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静态CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 超高4K的1静CMOS五羊
ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS 64K X 1 STANDARD SRAM, 15 ns, QCC22
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| P4C422-25DC P4C422-25DMB P4C422-12FC P4C422-15FC P |
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 12 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 15 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 35 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, PDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 25 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, PDSO24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDFP24
HIGH SPEED 256 x 4 STATIC CMOS RAM 256 X 4 STANDARD SRAM, 20 ns, CDIP22
HIGH SPEED 256 x 4 STATIC CMOS RAM 高速静56 × 4 CMOS存储
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| IS61LV6416 |
64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS静态RAM) 64K的16高速CMOS静态RAM.3伏，64K的16高速的CMOS静态RAM）的
|
Integrated Silicon Solution, Inc.
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| C30616BQC-07-SC C30616EQC-07-SC C30617BST-07-SC C3 |
Ultrafast high voltage rectifier
128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM
Ultrafast rectifier PDP energy recovery
4Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Half of Memory
High voltage ultrafast diode
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM
64 Kbit serial I²C bus EEPROM with hardware write control on top quarter of memory
1 Mbit serial I²C bus EEPROM
512 Kbit Serial SPI bus EEPROM with high speed clock
256 Kbit serial SPI bus EEPROM with high-speed clock
300V HYPERFAST RECTIFIER
HIGH VOLTAGE DAMPER DIODE (CRT HORIZONTAL DEFLECTION)
32 Kbit and 64 Kbit serial SPI bus EEPROMs with high-speed clock
(CRT TV horizontal deflection) high voltage damper diode
HIGH FREQUENCY SECONDARY RECTIFIERS
128 Kbit serial SPI bus EEPROM with high speed clock
4 Kbit, 2 Kbit and 1 Kbit serial SPI bus EEPROM with high-speed clock 光电
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit serial I²C bus EEPROM 光电
512 Kbit and 256 Kbit serial I²C bus EEPROM with three Chip Enable lines 光电
128 Kbit, 64 Kbit and 32 Kbit serial I²C bus EEPROM 光电
16 Kbit and 8 Kbit serial SPI bus EEPROM with high speed clock 光电
Ultrafast recovery - 1200 V diode 光电
16 Kbit, 8 Kbit, 4 Kbit, 2 Kbit and 1 Kbit (8-bit or 16-bit wide) MICROWIRE® serial access EEPROM 光电
Ultrafast recovery - high voltage diode 光电
Damper modulation diode for CRT TV 光电
DAMPER MODULATION DIODE FOR VIDEO 光电
4Kbit, 2Kbit and 1Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection 光电
HIGH EFFICIENCY ULTRAFAST DIODE 光电
HIGH VOLTAGE ULTRAFAST RECTIFIER 光电
Ultrafast recovery diode 光电
|
ECS, Inc.
Microchip Technology, Inc.
TE Connectivity, Ltd.
DB Lectro, Inc.
Electronic Theatre Controls, Inc.
Samtec, Inc.
TriQuint Semiconductor, Inc.
Infineon Technologies AG
Allegro MicroSystems, Inc.
Rochester Electronics, LLC
|
| MBM29F200BA |
2 M (256 K ×8/128 K ×16) BIT Flash Memory(2 M (256 K ×8/128 K ×16)V 电源电压闪速存储器) 2米（256亩8 / 128亩16）位闪存米（256亩8 / 128亩16）位V的电源电压闪速存储器
|
Fujitsu, Ltd.
|
| IDT70V658S15BC IDT70V658S15BCI IDT70V658S15BF IDT7 |
From old datasheet system
Dual N-Channel Digital FET
30V N-Channel PowerTrench MOSFET
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| KM616V1002B |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作)) 64K的16位高速CMOS静态RAM.3V的工作）4K的16位高速的CMOS静态随机存储器.3V的工作）
|
Samsung Semiconductor Co., Ltd.
|
| AT93C56AY1-10YU-1.8 AT93C56AY6-10YH-1.8 AT93C56A-1 |
Three-wire Serial EEPROM 2K (256 x 8 or 128 x 16) 4K (512 x 8 or 256 x 16)
|
ATMEL Corporation
|
