| PART |
Description |
Maker |
| BB731S |
Silicon epitaxial planar capacitance diodes with very wide effective capacitance
|
TY Semiconductor Co., Ltd
|
| BB641 Q62702-B792 SIEMENSAG-Q62702-B792 |
Silicon Variable Capacitance Diode (For VHF Hyperband TV/TR tuners High capacitance ratio Low series resistance)
From old datasheet system
|
SIEMENS AG
Infineon
Siemens Group
SIEMENS[Siemens Semiconductor Group]
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| AD6432 AD6432AST |
GSM 3 V Transceiver IF Subsystem
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series:20110; Packaging:Cut Tape TELECOM, CELLULAR, BASEBAND CIRCUIT, PQFP44
|
Analog Devices, Inc.
|
| KA-3528SRC KA-3528SGC KA-3528EC KA-3528IT KA-3528Y |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 25x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 120uF; Voltage: 400V; Case Size: 22x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 200V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 250V; Case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 200V; Case Size: 30x25 mm; Packaging: Bulk
3.5 x 2.8mm SURFACE MOUNT LED LAMPS
|
Kingbright Corporation.
ETC
|
| TD62501 TD62501F TD62501P TD62504F TD62504P TD6250 |
From old datasheet system
Ceramic Disc Capacitor; Capacitance:3900pF; Capacitance Tolerance: /- 20%; Series:VY2; Voltage Rating:330VDC; Capacitor Dielectric Material:Ceramic
7 SINGLE DRIVER 7单一驱动程序
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB
From old datasheet system
|
NXP Semiconductors N.V.
Philipss
Philips Semiconductors
|
| SA57031-XX SA57031-25 SA57031-26 SA57031-31 SA5703 |
Micropower 150 mA, low-noise, low dropout linear regulator with on/off 微功耗为150 mA，低噪声，低压差线性稳压器的开/
RECTIFIER BRIDGE 25A 800V 300A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY
CAP CERAMIC MONO .1UF 50V 10%
Ceramic Multilayer Capacitor; Capacitance:22pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:1.2pF; Capacitance Tolerance: 0.5pF; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0603; Termination:SMD RoHS Compliant: Yes
Ceramic Multilayer Capacitor; Capacitance:1.5pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
Ceramic Multilayer Capacitor; Capacitance:1pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
|
TE Connectivity, Ltd.
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| HVU355B |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| Q62702-B403 BB620 |
From old datasheet system
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners / Bd I)
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 硅变容二极管（对于Hyperband电视/录像机调谐器，屋宇署一
Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners, Bd I) 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
|
