| PART |
Description |
Maker |
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| IRF9530S IRF9530SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| SML80H14 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| IRFE9130 |
P-Channel Power MOSFET(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)(P沟道功率MOS场效应管(Vdss:-100V,Id(cont):-6.1A,Vdgr:-0.345V)) P沟道功率MOSFET（减振钢板基本：- 100V的，身份证（续） 6.1A，Vdgr 0.345V）性（P沟道功率马鞍山场效应管（减振钢板基本 100V的，身份证（续） 6.1AVdgr 0.345V））
|
Seme LAB
|
| NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
P-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| ADUM6200 ADUM6201 |
Dual-Channel, 5 <span style="text-transform: lowercase">k</span>V Isolators with Integrated DC/DC Converter (2/0 channel directionality)
Dual-Channel, 5 kV Isolators with Integrated DC/DC Converter (1/1 channel directionality)
|
Analog Devices
|
| 0528932095 |
0.5 FPC CONN ASSY ZIF SMT RA(BTM CONT) E/O -LEAD FREE-
|
Molex Electronics Ltd.
|
| AD7912 AD7912ARM AD7912ARM-REEL AD7912ARM-REEL7 AD |
2-Channel, 2.35 V to 5.25 V, 1 MSPS, 12-Bit A/D Converter
2-Channel, 2.35 V to 5.25 V, 1 MSPS, 10-Bit A/D Converter
2-Channel, 2.35 V to 5.25 V, 1 MSPS, 10-/12-Bit ADCs
Data Acquisition System - Datasheet Reference
|
AD[Analog Devices]
Analog Devices Inc
|
| AP1501A AP1501A-12 AP1501A-12K5 AP1501A-12K5A AP15 |
Adj, 150 Khz, 5 A PWM buck DC/DC converter
150Khz, 5A PWM Buck DC/DC Converter
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Clear; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Clear; Lens Style:(H x Dia) 8.7 x 5.8 mm; Voltage Rating:5V
IR Emitting Diode; LED Color:Infrared; Mounting Type:Through Hole; Terminal Type:3 Pin Leaded; Color:Infrared; Lens Style:(H x Dia) 12.5 x 10.0 mm; Voltage Rating:5.5V
Leaded Process Compatible: Yes
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Blue Gray; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Blue Gray; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:0.185A; Resistance, Rds on:6R; Voltage, Vgs Rds on measurement:10V; Case style:SOT-23 (TO-236); Current, Id max:0.185A; Current, Idm pulse:.8A; Marking, SMD:6K; Pins, No. RoHS Compliant: Yes
MOSFET, P SOT-23MOSFET, P SOT-23; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SOT-23; Current, Id cont:0.58A; Current, Idm pulse:2A; Power, Pd:0.35W; Resistance, Rds on:0.65R; SMD:1; Current, Id
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-385mA; On-Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-236; Drain Source On Resistance @ 10V:1.4ohm
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Infrared; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Infrared; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,270MA I(D),TO-226AA RoHS Compliant: Yes
IR EMITTER; Wavelength, typ:950nm; Current, forward If:5mA; Angle, viewing:90(degree); Temperature, operating range:-25(degree C) to (degree C) RoHS Compliant: Yes
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-580mA; On-Resistance, Rds(on):650mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23
|
ANACHIP[Anachip Corp]
|
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