| PART |
Description |
Maker |
| 1N821 1N823 1N829A 1N821A 1N823A 1N825 1N825A 1N82 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V/ 400 mW
TRANSF 5VAC 2.4A SPLIT PACK
TRANSF 1.75 OHM DUAL GATE DRIVE
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
Bobbins Transformer; Supply Voltage:230V; Power Rating:12VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.875"; External Height:1.438"; External Width:1.563"; Frequency:60GHz; Leaded Process Compatible:Yes
|
MOTOROLA[Motorola, Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| AP9452AGG-HF |
Capable of 2.5V Gate Drive, Single Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP2322GN-HF AP2322GN-HF14 |
Capable of 1.8V gate drive, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| AP2612GY-HF |
Capable of 1.8V Gate Drive, Simple Drive Requirement
|
Advanced Power Electronics Corp.
|
| GT03-122-055-A GT03-111-052-A GT03-111-069-B |
Gate Drive Transformer PULSE TRANSFORMER FOR GATE DRIVE APPLICATION(S)
|
ICE Components, Inc.
ICE COMPONENTS INC
|
| GT02 GT02-111-006 |
Gate Drive Transformer PULSE TRANSFORMER FOR GATE DRIVE APPLICATION(S)
|
ice Components, Ins.
ICE Components, Inc.
|
| AP2302AGN-HF AP2302AGN-HF-14 |
Capable of 2.5V gate drive, Lower Gate Charge
Surface mount package
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| GCU08AA-130 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| GCU40AA-90 |
Gate Commutated Turn-off (GCT) Thyristors/Gate Drive Units
|
Mitsubishi Electric Corporation
|
| HCPL-J314 HCPL-J314-300 HCPL-J314-500 HCPL-J314-XX |
0.4 Amp Output Current IGBT Gate Drive Optocoupler 0.4安培输出电流IGBT栅极驱动光电耦合
DB25 F/F NULL MODEM ADAPT SCA-
HCPL-J314 · 0.4 Amp Output Current IGBT Gate Drive Optocoupler
|
Ecliptek, Corp.
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
