| PART |
Description |
Maker |
| SLU301VR-2-01 SLU301VR-1-02 SLU301VR-24-02 SLU301V |
810 nm, LASER DIODE
785 nm, LASER DIODE
807 nm, LASER DIODE
798 nm, LASER DIODE
|
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| SLD105UL |
Low Power GaAIAs Laser Diode(低功耗镓铝砷激光二极管)
GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
| NX8369TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs
|
| NX5522EH NX5522EK |
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
Renesas Electronics Corporation
|
| M66512P M66512FP M66512 |
From old datasheet system
LASER-DIODE LASER-DIODE DRIVER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| OL3204N-40 OL3201N-40 |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1280-1330nm, THROUGH HOLE MOUNT, FC CONNECTOR
1.3 レm High-Power Laser-Diode DIP Module 1.3レ米高功率激光二极管双酯模块
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT02; Number of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Box Mount Receptacle 1.3レ米高功率激光二极管双酯模块
1.3 μm High-Power Laser-Diode DIP Module
1.3 m High-Power Laser-Diode DIP Module
|
LAPIS SEMICONDUCTOR CO LTD
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
