| PART |
Description |
Maker |
| WG25025SM WG8028S WG5028S WG30028S WG5030S WG8030S |
THYRISTOR|GTO|TO-200AC
THYRISTOR|GTO|2.8KV V(DRM)|TO-200VAR74
THYRISTOR|GTO|1.2KV V(DRM)|TO-200VAR51
THYRISTOR|GTO|TO-200AE 晶闸管| GTO的|00AE
THYRISTOR|GTO|TO-200VAR112 晶闸管| GTO的|00VAR112
THYRISTOR|GTO|TO-200VAR50W 晶闸管| GTO的|200VAR50W
THYRISTOR|GTO|TO-200VAR74W 晶闸管| GTO的|00VAR74W
THYRISTOR|GTO|1.4KV V(DRM)|TO-200VAR51
|
Electronic Theatre Controls, Inc.
Diodes, Inc.
Cornell Dubilier Electronics, Inc.
Toshiba, Corp.
|
| GDM20830 |
Gate Turn-off (GTO) Thyristor Module
|
Powerex Power Semiconductors
|
| H0500KC25E |
280 A, 2500 V, SYMMETRICAL GTO SCR
|
WESTCODE SEMICONDUCTORS LTD
|
| S12200H S1206 |
RMS on -state current
Thyristor GTO 2.5KV 3-Pin
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
|
| HGTP14N40F3VL FN3407 |
14A/ 400V N-Channel/ Logic Level Voltage Clamping IGBT
14A, 400V N-Channel, Logic Level Voltage Clamping IGBT
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| 5.0SMDJ54CA |
Excellent clamping capability
|
Shanghai Semitech Semic...
|
| SMS05C |
Low clamping voltage
|
Shanghai Leiditech Elec...
|
| FG450BL32 |
THYRISTOR|GTO|1.6KV V(DRM)|TO-200AC 晶闸管| GTO的| 1.6KV五（DRM）的|00AC
|
Integrated Silicon Solution, Inc.
|
| FG1800CH40 |
THYRISTOR|GTO|2KV V(DRM)|TO-200AE 晶闸管| GTO的| 2kV的五（DRM）的|00AE
|
SIEMENS AG
|
| RLP1N06CLE |
1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET
1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,电压箝位,电流限定,N沟道功率MOS场效应管)
|
INTERSIL[Intersil Corporation]
|
