| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| GT25G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT20G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| RJP4301APP-M0-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4003ASA-0-Q0 RJP4003ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4002ASA-00-Q0 RJP4002ASA |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY25BAJ-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation
POWEREX [Powerex Power Semiconductors]
POWEREX[Powerex Power Semiconductors]
|
| CT40KM-8H |
Transistors>IGBT>for Stlobe use
Nch IGBT for Strobe Flasher
|
RENESAS[Renesas Electronics Corporation]
|
