| PART |
Description |
Maker |
| CD214A-B330 B360 |
Schottky Rectifier; Forward Current:3A; Forward Voltage:0.5V; Leaded Process Compatible:No; Mounting Type:Surface Mount; Package/Case:DO-214AC; Packaging:Cut Tape; Peak Reflow Compatible (260 C):No RoHS Compliant: No Schottky Rectifier; Forward Current:3A; Forward Voltage:0.7V; Leaded Process Compatible:No; Mounting Type:Surface Mount; Package/Case:DO-214AC; Packaging:Cut Tape; Peak Reflow Compatible (260 C):No RoHS Compliant: No
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BOURNS INC
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| NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes HIGH-SPEED SWITCHING USE
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes HIGH-SPEED SWITCHING USE
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Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
| RHFL4913S50-04V 5962F0253401VXA 5962F0253401VXC 59 |
THREE-TERMINAL POSITIVE FIXED VOLTAGE REGULATORS 三端固定电压调节 Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes RAD-HARD POSITIVE FIXED VOLTAGE REGULATORS
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
| EC31QS03L |
SBD TYPE Extremely Low Forward Voltage drop Diode
|
ETC Nihon Inter Electronics Corporation
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管 MOS FIELD EFFECT TRANSISTOR Pch enhancement type MOS FET
|
NEC, Corp. NEC[NEC]
|
| SSTUA32864EG SSTUA32864 SSTUA32864EC |
1.8 V configurable registered buffer for DDR2-667 RDIMM applications Linear Voltage Regulator IC; Package/Case:8-MSOP; Current Rating:250mA; Leaded Process Compatible:No; Output Voltage Max:2.8V; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Voltage Regulator Type:Low Dropout (LDO) Linear Voltage Regulator IC; Package/Case:8-MSOP; Current Rating:250mA; Leaded Process Compatible:No; Output Voltage Max:1.8V; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Voltage Regulator Type:Low Dropout (LDO) Linear Voltage Regulator IC; Package/Case:8-MSOP; Current Rating:250mA; Leaded Process Compatible:No; Output Voltage Max:2.5V; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Voltage Regulator Type:Low Dropout (LDO)
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NXP Semiconductors PHILIPS[Philips Semiconductors]
|
| U1GC44 |
Average Forward Current Repetitive Peak Reverse Voltage Mini Plastic Mold Package
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Toshiba Semiconductor
|
| EC31QS10 |
SBD SDR Connector; No. of Contacts:14; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 1.3 A, 100 V, SILICON, RECTIFIER DIODE Low Forward Voltage drop Diode
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Nihon Inter Electronics, Corp. NIEC[Nihon Inter Electronics Corporation]
|
| FTD110B |
DIODE TRIO WAI TYPE Low forward voltage drop High reliability MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
|
First Components International FCI connector
|
| SA110C SA43A SA160 SA14 |
500 WATT PEAK POWER TRANSIENT VOLTAGE SUPPRESSORS 500瓦峰值功率瞬态电压抑制器 /Case:1206; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount RES 2.74K OHM 1/10W .1% 0805 SMD 500W TRANSIENT VOLTAGE SUPPRESSORS 500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 110.00 V. Test current IT = 1 mA.
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Won-Top Electronics Co., Ltd. Bytes
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