| PART |
Description |
Maker |
| CPH583507 CPH5835 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| KSQ30A04 |
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
ETC
http://
|
| FCH10A06 |
SBD
Schottky Barrier Diode
|
Nihon Inter Electronics Corporation
|
| MA10704 |
Schottky Barrier Diodes (SBD) 0.2 A, 20 V, SILICON, SIGNAL DIODE
|
Panasonic Corporation
Panasonic, Corp.
|
| MA2C700A MA2C700 |
Schottky Barrier Diodes (SBD) SILICON, L BAND, MIXER DIODE, DO-34
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| UPA508TE-T2 |
Nch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| MA745 MA3J745 MA3J745MA745 |
Schottky Barrier Diodes (SBD)
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
|
PANASONIC[Panasonic Semiconductor]
|
| MA3X789 MA789 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
PANASONIC[Panasonic Semiconductor]
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
