| PART |
Description |
Maker |
| FW503 FW503-E |
Pch SBD
FET Transistor: DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| MCH5810 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
|
Sanyo Semicon Device
|
| MCH5818 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
| CPH5818 |
Pch SBD
|
SANYO
|
| CPH5810 |
Pch SBD
|
SANYO
|
| CPH5807 |
Pch SBD
|
SANYO
|
| QS5U33 |
4V Drive Pch SBD MOSFET
|
Rohm
|
| TT8U2TR |
1.5V Drive Pch SBD MOSFET
|
ROHM
|
| ES6U42 |
2.5V Drive Pch SBD MOSFET
|
Rohm
|
| 2SJ449 2SJ449JM |
Pch vertical DMOS FET MP-45F
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
