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FSYA254R4 - Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

FSYA254R4_1243208.PDF Datasheet
 
Part No. FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FSYA254R1 FSYA254R3
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
File Size 55.31K  /  8 Page  

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INTERSIL[Intersil Corporation]
Intersil, Corp.

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 Full text search : Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
 Product Description search : Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

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