| PART |
Description |
Maker |
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
| SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03 |
100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
| FL16KM-6A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| 2SK1931 |
Power MOSFETs / VR Series
|
Shindengen
|
| FS5KM-9A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS2KM-12A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS10KM-12A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FL14KM-9A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS4KM-12A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS14KM-9A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FY7BCH-02B |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
| FY5AEJ-03 |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|