| PART |
Description |
Maker |
| FQPF6N90C FQP6N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP8N90C FQPF8N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF9N50CYDTU |
500V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail 9 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| FQPF8N60CT |
600V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail
|
FAIRCHILD SEMICONDUCTOR CORP
|
| STB6NB90 6439 |
N - CHANNEL 900V - 1.7 Ohm - 5.8A - D 2 PAK PowerMESH MOSFET
From old datasheet system
N - CHANNEL 900V - 1.7OHM - 5.8A - D2PAK PowerMESHO MOSFET
N-CHANNEL Power MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
ST Microelectronics
|
| IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR |
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 8.0ohm，身份证\u003d 1.7A
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FQP10N20C FQPF10N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| FQI8N60C FQB8N60C FQB8N60CTM |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP8N80C FQPF8N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQA13N50C |
500V N-Channel Advance Q-FET C-Series
500V N-Channel MOSFET 13.5 A, 500 V, 0.48 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
