| PART |
Description |
Maker |
| FDB2572 FDP2572 FDB2572NL |
N-Channel PowerTrench MOSFET 150V, 29A, 54mз 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
150V N-Channel UltraFET Trench MOSFET 29A, 0.056 Ohms @ VGS = 10V, TO-263/D2PAK Package 4 A, 150 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
N-Channel PowerTrench MOSFET 150V/ 29A/ 54m
N-Channel PowerTrench MOSFET 150V, 29A, 54m蟹
N-Channel PowerTrench MOSFET 150V, 29A, 54m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STW40NS15 |
40 A, 150 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY MOSFET
N-CHANNEL 150V - 0.042ohm - 40A TO-247 MESH OVERLAY⑩ MOSFET
N-CHANNEL 150V 0.042 OHM 40A TO-247 MESH OVERLAY MOSFET
|
STMicroelectronics
ST Microelectronics
|
| IRFIB41N15D IRFSL41N15D IRFB41N15D IRFS41N15D IRFI |
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
150V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak(Iso)
|
IRF[International Rectifier]
|
| IRFPS3815 |
150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)
|
IRF[International Rectifier]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| STS5N150 9639 |
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFETPOWER MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
STMicroelectronics
意法半导
ST Microelectronics
|
| FQD16N15 FQU16N15 FQD16N15TM FQD16N15TF |
150V N-Channel QFET
150V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB6N15 FQI6N15 FQI6N15TU FQB6N15TM |
150V N-Channel QFET
150V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI9N15 FQB9N15 FQI9N15TU |
150V N-Channel QFET
150V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB16N15 FQI16N15 FQB16N15TM |
150V N-Channel MOSFET
150V N-Channel QFET
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FQA90N15 |
150V N-Channel MOSFET(漏源电压50V的N沟道增强型MOSFET) 90 A, 150 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FDA79N15NL |
150V N-Channel MOSFET 79 A, 150 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
