| PART |
Description |
Maker |
| IRF5NJ9540 IRF5NJB9540 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
SURFACE MOUNT (SMD-0.5) 100V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.117ohm, Id=-18A)
|
International Rectifier
|
| FDP3682 FDB3682 FDP3682NL |
N-Channel PowerTrench MOSFET 100V/ 32A/ 36m
N-Channel PowerTrench MOSFET 100V, 32A, 36mз
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 32A, 0.036 ohm @ Vgs = 10V, TO-220 Package
|
Fairchild Semiconductor
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| JANS2N6849 JANTXV2N6849 JANTX2N6849 2489 IRFF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
HEXFET? TRANSISTORS
From old datasheet system
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
|
IRF[International Rectifier]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| IRHN7150 JANSF2N7268U JANSH2N7268U IRHN3150 IRHN41 |
100V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
CORD, COILED, 10MM STUD-4MM SKT, 4M; Length, lead:4m RoHS Compliant: NA
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) 抗辐射功率MOSFET表面贴装系统（SMD - 1
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRHG563110 IRHG567110 IRHG563110P IRHG567110P IRHG |
-100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
-100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE 100V, Combination 2N-2P-CHANNEL
|
IRF[International Rectifier]
|
| FDM3622_07 FDM3622 FDM362207 |
N-Channel PowerTrench? MOSFET 100V, 4.4A, 60mΩ
N-Channel PowerTrench㈢ MOSFET 100V, 4.4A, 60mヘ
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRHY597130CM IRHY593130CM |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 12.5A I(D) | TO-257AA
|
IRF[International Rectifier]
|
| IRHQ567110 IRHQ567110P IRHQ563110 IRHQ563110N IRHQ |
100V 300kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
100V Dual 2N- and 2P- Channel MOSFET in a 28-pin LCC package 100V的双n -2P -通道MOSFET的采8引脚LCC封装
RADIATION HARDENED 100V, COMBINATION 2N-2P-CHANNEL POWER MOSFET SURFACE MOUNT (LCC-28)
RADIATION HARDENED POWER MOSFET
100V 100kRad Hi-Rel Dual 2N and 2P -Channel TID Hardened MOSFET in a 28-pin LCC package
|
HIROSE ELECTRIC Co., Ltd.
IRF[International Rectifier]
|
| IRF5N5210 |
-100V Single P-Channel Hi-Rel MOSFET in a SMD-2 package
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.060ohm, Id=-31A)
POWER MOSFET P-CHANNEL(Vdss=-100V/ Rds(on)=0.060ohm/ Id=-31A)
|
International Rectifier
|
| OM6103ST OM6101ST OM6104ST OM6001ST OM6002SR OM600 |
400V Single N-Channel Hi-Rel MOSFET in a TO-257AA package 400V单N沟道高可靠性MOSFET的采用TO - 257AA封装
400V , 5.5Amp, N Channel MOSFET With Zener Gate Protection(400V , 5.5A,N沟道，MOS场效应管(带齐纳门保护
100V , 14 Amp, N Channel MOSFET With Zener Gate Protection(100V , 14A,N沟道，MOS场效应管(带齐纳门保护 100V的，14安培，N沟道MOSFET与齐门保护（100V的，14A条，沟道来说，MOS场效应管（带齐纳门保护）
500V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
200V Single N-Channel Hi-Rel MOSFET in a D2 package
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
100V Single N-Channel Hi-Rel MOSFET in a D2 package
400V Single N-Channel Hi-Rel MOSFET in a D2 package
500V Single N-Channel Hi-Rel MOSFET in a D2 package
POWER MOSFET IN HERMETIC ISOLATED JEDEC TO 257AA PACKAGE
Isolated Hermetic Metal Package
|
International Rectifier, Corp.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
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