| PART |
Description |
Maker |
| FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率，高频率，按包装类
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 550D08 550D107X9015S2 550D127X9015S2 550D157X9015S |
Solid-Electrolyte TANTALEX㈢ Capacitors for High Frequency Power Supplies
Solid-Electrolyte TANTALEX? Capacitors for High Frequency Power Supplies
Solid-Electrolyte TANTALEX庐 Capacitors for High Frequency Power Supplies
Solid-Electrolyte TANTALEX垄莽 Capacitors for High Frequency Power Supplies
|
Vishay Siliconix
|
| FD1500AU-120DA |
HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE 高功率，高频率新闻袋
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| ST49C101A ST49C101ACF8-01 ST49C101ACF8-03 ST49C101 |
High Frequency Clock Multiplier 80 MHz, OTHER CLOCK GENERATOR, PDSO8
High Frequency Clock Multiplier(高频时钟乘法器（掩摸可编程单片模拟锁相环设备
Preprogrammed High Speed Frequency Multiplier
|
Exar, Corp.
EXAR[Exar Corporation]
|
| FZ800R12KS4B2 |
High Power Module with AlSiC base plate and short tail IGBT2 for high switching frequency
|
eupec GmbH
|
| 15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SJ114 |
HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER
|
Hitachi Semiconductor
|
| KTC2803 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY HIGH FREQUENCY POWER AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| 2SA1683 2SC4414 |
High-Frequency General-Purpose Amp/ High-Frequency Power Amp Applications
High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications
|
SANYO[Sanyo Semicon Device]
|
