| PART |
Description |
Maker |
| M484M1644 |
64Mb SDRAM
|
eorex
|
| H5DU6462CTR-E3X H5DU6462CTR-K2X H5DU6462CTR-K3X H5 |
64Mb DDR SDRAM
|
Hynix Semiconductor
|
| WED3DG649V7D2 WED3DG649V75D2 WED3DG649V10D2 WED3DG |
64MB- 8M x 64 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| W3DG648V75D1 W3DG648V10D1 W3DG648V-D1 W3DG648V7D1 |
64MB - 2x4Mx64 SDRAM, UNBUFFERED
|
White Electronic Designs Corporation
|
| W3DG728V75D2 W3DG728V7D2 W3DG728V10D2 W3DG728V-D2 |
64MB-8Mx72 SDRAM W/ PLL, REGISTER AND SPD
|
WEDC[White Electronic Designs Corporation]
|
| HYM71V8M655HCT6 |
8Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 64MB 8Mx64 | 3.3 | 8/P/S | x4 | SDRAM的特别提款权-4MB的内
|
Daesan Electronics, Corp.
|
| HB52E88EM HB52E89EM |
64 MB Unbuffered SDRAM DIMM(64MB 未缓冲同步DRAM DIMM)
|
Hitachi,Ltd.
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HY5Y6B6DLFP-PF HY5Y6B6DLFP-HF |
Mobile SDR - 64Mb
|
Hynix Semiconductor
|
| NT5SV8M8DT NT5SV8M8DT-6K NT5SV8M8DT-7 NT5SV8M8DT-7 |
64Mb Synchronous DRAM
|
ETC[ETC]
|
