| PART |
Description |
Maker |
| EM39LV80090Y EM39LV800 EM39LV80055RD EM39LV80055RH |
8M Bits (512Kx16) Flash Memory
|
EMC[ELAN Microelectronics Corp]
|
| HY29F800ABT-55 HY29F800ABR-90 HY29F800ABR-12 HY29F |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO44
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位1Mx8/512Kx16），5伏只，闪
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 512K X 16 FLASH 5V PROM, 55 ns, PDSO48
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory 8兆位Mx8/512Kx16），5伏只，闪
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| EM39LV80070M EM39LV80055RY EM39LV80055RD EM39LV800 |
DDR-I, 13/26-Bit Registered Buffer 分位12Kx16）闪
8M Bits (512Kx16) Flash Memory 分位12Kx16）闪
IC, DIGITAL, OCTAL BUS XCEIVER & 3.3V TO 5.0V, SHFTR BIDRCNTL, V XLATOR, 24PIN T
|
Elan Microelectronics, Corp.
ELAN Microelctronics Corp .
|
| TC58FVB321 TC58FVXB-70 TC58FVXB-10 TC58FVT321-70 |
32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32兆位分 200万6位）的CMOS闪存
CAT5E PATCH CORD 100MHZ 7 FOOT BLACK 32兆位分 200万6位）的CMOS闪存
32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| HY29F800ABG-90 HY29F800ABG-70I HY29F800ABG-90I HY2 |
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
|
http://
|
| K5P2880YCM |
Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit 1Mx8/512Kx16 Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM23V8100DET KM23V8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16）的CMOS掩模ROM00万位Mx8 / 512Kx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| K9F4G08U1M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
| TC58FVT641 TC58FVB641FT-10 TC58FVB641XB-70 TC58FVB |
64-MBIT (8M 】 8 BITS / 4M 】 16 BITS) CMOS FLASH MEMORY
64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| K9E2G08U0M K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M-V |
256M x 8 Bits NAND Flash Memory
|
Samsung Electronic
Samsung semiconductor
|
| K9T1G08U0M |
128M x 8 Bits NAND Flash Memory
|
http://
|
| UPD29F032202AL-X |
DUAL OPERATION FLASH MEMORY 32M BITS A SERIES
|
NEC
|
