| PART |
Description |
Maker |
| EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|
| EDD5108ADTA-6BLI EDD5116ADTA-6BLI EDD5116ADTA-7ALI |
32M X 16 DDR DRAM, 0.75 ns, PDSO66
512M bits DDR SDRAM WTR (Wide Temperature Range)
|
ELPIDA MEMORY INC
|
| EDD2508AKTA-5C EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400) 256M比特DDR SDRAM内存2M的字× 8位，支持DDR400
|
Elpida Memory, Inc.
|
| EDX5116ADSE-4D-E EDX5116ADSE-3C-E EDX5116ADSE-3B-E |
512M bits XDR⑩ DRAM
|
Elpida Memory
|
| EDS5108ABTA-6B EDS5108ABTA-7A |
512M bits SDRAM 64M X 8 SYNCHRONOUS DRAM, 5 ns, PDSO54
512M bits SDRAM 64M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Elpida Memory, Inc.
|
| EDE5132BABG-6G-F |
512M bits DDR2 SDRAM
16M X 32 DDR DRAM, 0.45 ns, PBGA128
|
ELPIDA MEMORY INC
|
| EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位，2个等级）
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
| K4C89323AF-GCFB K4C89323AF-TCF6 K4C89323AF-TCF5 K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
|
| EDE1104AASE-5C-E EDE1108AASE-5C-E EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. 256M X 4 DDR DRAM, 0.6 ns, PBGA68
|
Elpida Memory, Inc.
|
| EDE2516ABSE-GE-E EDE2508ABSE-GE-E ELPIDAMEMORYINC. |
256M bits DDR2 SDRAM for HYPER DIMM 32M X 8 DDR DRAM, 0.4 ns, PBGA60
|
Elpida Memory, Inc.
|
| IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc.
天津新技术产业园区管理委员会
|
