| PART |
Description |
Maker |
| P600M6A10 P600B6A1 P600A6A05 P600G6A4 P600G P600J |
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 1000V. Maximum RMS voltage 700V. Maximum DC blocking voltage 1000V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 800V. Maximum RMS voltage 560V. Maximum DC blocking voltage 800V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 600V. Maximum RMS voltage 420V. Maximum DC blocking voltage 600V
Silicon rectifier.Current 6.0A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V
SILICON RECTIFIER(VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 6.0 Amperes) 一般整流（电压范围- 50000伏特，电六点○安培）
|
WINGS[Wing Shing Computer Components]
Vishay Intertechnology, Inc.
|
| IXRH50N80 IXRH50N60 |
IGBT with Reverse Blocking capability
|
IXYS[IXYS Corporation]
|
| TFA107 TFA107I TFA107S TFA108 TFA108I TFA108S TFA1 |
Reverse Blocking Triode Thyristor
|
Sanken electric
|
| MAX14606EWLT |
Overvoltage Protectors with Reverse Bias Blocking
|
MAXIM - Dallas Semiconductor
|
| TIC126A12 |
P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductor
|
| DGT305SE18 DGT305RE |
Reverse Blocking Gate Turn-off Thyristor
|
Dynex Semiconductor
|
| MCR16N MCR16NG MCR16 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| MCR6904 MCR69-3G MCR69-2 MCR69-2G MCR69-3 MCR69 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| C122B1 C122F1G C122B1G C122F1 |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| 2N6394-D |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| 2N6240 |
Silicon controlled Rectifiers Reverse Blocking Triode Thyristors
|
MOTOROLA[Motorola, Inc]
|
