| PART |
Description |
Maker |
| 2N3896 2N3899 2N6171 2N6172 2N6173 2N6174 2N3870 2 |
Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 可控硅整流器(反向阻断三极晶闸管 Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 400 V, SCR, TO-203AA Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) 35 A, 100 V, SCR, TO-203AA (2N38xx) Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors)
|
Motorola Mobility Holdings, Inc. Motorola Inc MOTOROLA[Motorola, Inc]
|
| IXBOD1-16RD IXBOD1-13R IXBOD1-17R IXBOD1-14RD IXBO |
1600 V, RVS BLOCKING BOD 1300 V, RVS BLOCKING BOD 1700 V, RVS BLOCKING BOD 1400 V, RVS BLOCKING BOD 1200 V, RVS BLOCKING BOD 1500 V, RVS BLOCKING BOD 2000 V, RVS BLOCKING BOD 1800 V, RVS BLOCKING BOD
|
IXYS, Corp.
|
| DRA03TG DRA03T DRA03TB DRA03TC DRA03TE |
0.3A Reverse Blocking Thyristor
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
| IXRH50N80 IXRH50N60 |
IGBT with Reverse Blocking capability
|
IXYS[IXYS Corporation]
|
| 2N3008 |
SILICON REVERSE-BLOCKING TRIODE THYRISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
| DRA8 DRA8E |
12.6 A, 400 V, SCR, TO-220 8.0A Reverse Blocking Thyristor
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
| TIC116A |
(TIC116x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductors
|
| MCR8N MCR8NG |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
| TIC106A TIC106B TIC106C |
(TIC106x) P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS
|
Comset Semiconductors
|
| MCR8-D |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| 2N6394-D |
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|