| PART |
Description |
Maker |
| DF5A8.2F |
Diodes for Protecting Against ESD
|
TOSHIBA
|
| DF5A6.8LF |
Diodes for Protecting Against ESD
|
TOSHIBA
|
| DF5A6.8LFU |
Diodes for Protecting Against ESD
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| DF5A6 |
DIODES (DIODES FOR PROTECTING AGAINST ESD)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 01ZAB8.2 01ZA8 |
DIODES( DIODES FOR PROTECTING AGAINST ESD)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CZRH584C10-G CZRH584C11-G CZRH584C12-G CZRH584C13- |
Zener Diodes, P-D=0.2Watts, V-Z=10V
Zener Diodes, P-D=0.2Watts, V-Z=11V
Zener Diodes, P-D=0.2Watts, V-Z=12V
Zener Diodes, P-D=0.2Watts, V-Z=13V
Zener Diodes, P-D=0.2Watts, V-Z=15V
Zener Diodes, P-D=0.2Watts, V-Z=16V
Zener Diodes, P-D=0.2Watts, V-Z=18V
Zener Diodes, P-D=0.2Watts, V-Z=20V
Zener Diodes, P-D=0.2Watts, V-Z=22V
Zener Diodes, P-D=0.2Watts, V-Z=24V
Zener Diodes, P-D=0.2Watts, V-Z=27V
Zener Diodes, P-D=0.2Watts, V-Z=2.4V
Zener Diodes, P-D=0.2Watts, V-Z=30V
Zener Diodes, P-D=0.2Watts, V-Z=33V
Zener Diodes, P-D=0.2Watts, V-Z=36V
Zener Diodes, P-D=0.2Watts, V-Z=2.7V
Zener Diodes, P-D=0.2Watts, V-Z=39V
Zener Diodes, P-D=0.2Watts, V-Z=3V
Zener Diodes, P-D=0.2Watts, V-Z=3.3V
Zener Diodes, P-D=0.2Watts, V-Z=3.6V
Zener Diodes, P-D=0.2Watts, V-Z=3.9V
Zener Diodes, P-D=0.2Watts, V-Z=43V
Zener Diodes, P-D=0.2Watts, V-Z=4.7V
Zener Diodes, P-D=0.2Watts, V-Z=4.3V
Zener Diodes, P-D=0.2Watts, V-Z=51V
Zener Diodes, P-D=0.2Watts, V-Z=5.1V
Zener Diodes, P-D=0.2Watts, V-Z=5.6V
Zener Diodes, P-D=0.2Watts, V-Z=47V
Zener Diodes, P-D=0.2Watts, V-Z=6.8V
Zener Diodes, P-D=0.2Watts, V-Z=6.2V
Zener Diodes, P-D=0.2Watts, V-Z=9.1V
|
Comchip Technology
|
| B59204J0130B010 B59202J0135B010 B59201J0140B010 |
Self-protecting power resistors
|
EPCOS
|
| FLF-40 FLM-80 FLM-60 FLM-100 FLM-120 FLM-30 |
Protecting Wiring Harnesses
|
Cooper Bussmann, Inc.
|
| BWD |
Aluminum Housed Wirewound Resistors, Anodized aluminum casing to utilize heat-sink effect, Self-protecting, Short circuit proof, Protection according to IP 54
|
Vishay
|
| DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护外延平面
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD Epitaxial Planar Type
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| MA6X127 |
Small-signal device - Diodes - Swicthing Diodes
From old datasheet system
Switching Diodes
|
Matsshita / Panasonic
|
| MA6X126 |
Small-signal device - Diodes - Swicthing Diodes
From old datasheet system
Switching Diodes
|
Matsshita / Panasonic
|
|
