| PART |
Description |
Maker |
| DF20DB80 DF20DB40 DF20DB40-80 |
THREE PHASE DIODE MODULES (BRIDGE)
DIODE(THREE PHASES BRIDGE TYPE)
From old datasheet system
|
SANREX[SanRex Corporation]
|
| DF50BA80 DF50BA40 |
THREE PHASE DIODE MODULES (BRIDGE)
DIODE(THREE PHASES BRIDGE TYPE)
|
SANREX[SanRex Corporation]
|
| DF200AA160 DF200AA120 DF200AA120-160 |
DIODE(THREE PHASES BRIDGE TYPE)
From old datasheet system
DIODE MODULE
|
SANREX[SanRex Corporation]
sanrex B257
|
| DF100BA80 DF100BA40 DF100BA40-80 |
DIODE(THREE PHASES BRIDGE TYPE)
From old datasheet system
|
SANREX[SanRex Corporation]
|
| DF20BA80 DF20BA40 DF20BA40-80 |
From old datasheet system
DIODE(THREE PHASES BRIDGE TYPE)
|
SANREX[SanRex Corporation]
|
| DF30BA80 DF30BA40 DF30BA40-80 |
(DF30BA40/80) DIODE(THREE PHASES BRIDGE TYPE)
From old datasheet system
|
SANREX[SanRex Corporation]
|
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| S3901-FX |
MOSFET, Switching; VDSS (V): 400; ID (A): 15; Pch : 100; RDS (ON) typ. (ohm) @10V: 0.34; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
|
NEC
|
| VUO30-14NO3 VUO30-18NO3 VUO30 VUO30-08NO3 VUO30-12 |
Three Phase Rectifier Bridge 3 PHASE, 50 A, 1800 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 50 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 50 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 50 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Three Phase Rectifier Bridge 3 PHASE, 50 A, 1600 V, SILICON, BRIDGE RECTIFIER DIODE
Power Modules/Rectifier Bridge Modules: Three Phase Diode Bridges
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
