| PART |
Description |
Maker |
| 1N4575 1N4766A 1N4767 1N4768A 1N4576 1N4767A 1N457 |
Low-level temperature-compensated zener reference diode. Max voltage 0.048 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.070 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.014 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.024 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.028 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.099 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.002 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.005 V.
Low-level temperature-compensated zener reference diode. Max voltage 0.003 V.
|
Motorola
|
| 1N828-1-1 1N822-2 1N829ATR 1N829ATR-1 1N829ATR-1-1 |
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AA
0TC Reference Voltage Zener
6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| CMKTC825A |
SURFACE MOUNT ULTRAmini TEMPERATURE COMPENSATED SILICON ZENER DIODE
announces the release of the CMKTC825A temperature compensated (TC) Zener diode packaged in a space saving ULTRAmini SOT-363 surface mount case.
|
CENTRAL[Central Semiconductor Corp]
|
| MPXV5050VC6T1 |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
| 1N4903A 1N4903 1N4905A 1N4901A 1N4907A 1N4907 1N49 |
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
TSPC 5/ 4-ST-7,62
TSPC 5/11-STF-7,62
TEMPERATURE COMPENSATED ZENER REFERENCE DIODES 温补参考稳压二极管
12.8 V, SILICON, VOLTAGE REFERENCE DIODE, DO-35
|
Compensated Deuices Inc...
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
Microsemi, Corp.
|
| 2SC396404 |
Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage
2 A, 40 V, NPN, Si, POWER TRANSISTOR
Switching Applications Solenoid Drive Applications Temperature Compensated for Audio Amplifier Output Stage
|
Toshiba Semiconductor
|
| TPT-13-6016 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TPT-13-6015 TPT-13-6014 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-13-6036 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-8-2024 |
Temperature Compensated Power Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| 6755 6756 |
TEMPERATURE COMPENSATED
|
Vectron International, Inc
|
