| PART |
Description |
Maker |
| 45912-0026 0459120026 |
12.90mm (.508) Pitch EXTreme PowerEdge? Mixed Power/Signal Card Edge Connector, Double Sided, 4 Segments (Power, Power, Signal, Power Sequence), Press-Fit
|
Molex Electronics Ltd.
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| 2SC5505 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN epitaxial planar type
|
Panasonic Semiconductor
|
| 2SC5993 |
Power Device - Power Transistors - Television/Display
For power amplification For TV VM circuit
|
PANASONIC[Panasonic Semiconductor]
|
| 2SD2420A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1267A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1499 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SB0936 2SB0936A 2SB936 2SB936A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
