| PART |
Description |
Maker |
| CM50TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 50 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 50 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HU-12F |
Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM400DU-5F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD400 Amperes/250 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM50DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 50 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 50 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| CM300DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| PSTG25HTT12 |
Powerline N-Channel Trench Gate-IGBT Triple Module
Powerline N-Channel Trench Gate-IGBT Module
Powerline N-Channel Trench Gate- IGBT Triple Module
|
Powersem GmbH
|
| MCP602-IOT MCP604-ISL MCP604-ISN MCP604-IST MCP601 |
300000 SYSTEM GATE 2.5 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
300000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
300,000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN
2.7V to 5.5V Single Supply CMOS Op Amps 2.7V5.5V单电源CMOS运算放大
2.7V to 5.5V Single Supply CMOS Op Amps 2.7V.5V单电源CMOS运算放大
|
Microchip Technology Inc.
Microchip Technology, Inc.
|
| APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| STGWT40V60DF STGW40V60DF |
Trench gate field-stop IGBT, V series
|
STMicroelectronics
|
| STGB20H60DF STGP20H60DF STGF20H60DF |
600 V, 20 A high speed trench gate field-stop IGBT
|
ST Microelectronics
STMicroelectronics
|
| STGWT40H65FB STGW40H65FB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
