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CM600HN-5F - Integrated Gate Bipolar Transistor (IGBT) Modules: 250V HIGH POWER SWITCHING USE INSULATED TYPE

CM600HN-5F_1227018.PDF Datasheet
 
Part No. CM600HN-5F
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HIGH POWER SWITCHING USE INSULATED TYPE
File Size 65.59K  /  4 Page  

Maker

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: CM600HN-5F
Maker: MITSUBIS..
Pack: 模块
Stock: Reserved
Unit price for :
    50: $149.17
  100: $141.71
1000: $134.25

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