| PART |
Description |
Maker |
| CM600HA-5F |
Trench Gate Design Single IGBTMOD600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM600HU-24F |
Trench Gate Design Single IGBTMOD?/a> 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM100TJ-24F |
128 x 64 pixel format, LED or EL Backlight available
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| PSTG50HST12 |
Powerline N-Channel Trench Gate-IGBT Module
|
Powersem GmbH
|
| STGW60H65DF |
60 A, 650 V field stop trench gate IGBT with very fast diode
|
ST Microelectronics
STMicroelectronics
|
| STGW40H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
| STGWT60V60DF STGW60V60DF |
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
|
STMicroelectronics
|
| STGWT30H65FB STGW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
|
ST Microelectronics
|
