| PART |
Description |
Maker |
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
Trench Gate Design Dual IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD?/a> 75 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM200DU-12F |
Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM75TU-12F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| CM200DY-24NF |
Trench Gate Design Dual IGBTMOD
|
Powerex Power Semiconductors
|
| CM450HA-5F |
Trench Gate Design Single IGBTMOD 450 Amperes/250 Volts
Trench Gate Design Single IGBTMOD⑩ 450 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM400HU-24F |
Trench Gate Design Single IGBTMOD?/a> 400 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 400 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 400 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| HER306-T3 HER306-TB HER302-T3 HER302-TB HER308 HER |
3.0A HIGH EFFICIENCY RECTIFIER 3.0A的高效整
85000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
20000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Won-Top Electronics Co., Ltd.
WTE[Won-Top Electronics]
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| XC2S100-5FG256C XC2S100-5FG256I XC2S100 XC2S15-5VQ |
Spartan-II FPGA Family Data Sheet
30000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN FPGA, 216 CLBS, 30000 GATES, 263 MHz, PQFP144
100000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 600 CLBS, 100000 GATES, 263 MHz, PBGA256
150000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 864 CLBS, 150000 GATES, 263 MHz, PBGA456
200000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 1176 CLBS, 200000 GATES, 263 MHz, PBGA256
200000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 1176 CLBS, 200000 GATES, 263 MHz, PBGA456
100000 SYSTEM GATE 2.5 VOLT LOGIC CELL A - NOT RECOMMENDED for NEW DESIGN FPGA, 600 CLBS, 100000 GATES, 263 MHz, PQFP144
30000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN FPGA, 216 CLBS, 30000 GATES, 263 MHz, PQFP100
150 000 SYSTEM GATE 2.5 VOLT FPGA (IQ AU - NOT RECOMMENDED for NEW DESIGN
15000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
50000 SYSTEM GATE 2.5 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
Spartan-II FPGA Family
Second generation ASIC replacement technology
|
Xilinx, Inc.
XILINX INC
|
| FS75R07N2E4 FS75R07N2E4-13 |
Dual channel IGBT gate driver
EconoPACK2 Modul mit Trench
|
Infineon Technologies AG
Infineon Technologies A...
|
| ACS21MS 5962F9862901V9A 5962F9862901VCC 5962F98629 |
AC SERIES, DUAL 4-INPUT AND GATE, UUC14
Radiation Hardened Dual 4-Input AND Gate AC SERIES, DUAL 4-INPUT AND GATE, CDIP14
Quadruple Bus Buffer Gate With 3-State Outputs 14-SOIC 0 to 70
|
Intersil, Corp.
Intersil Corporation
|
