| PART |
Description |
Maker |
| CM150TU-12F |
Trench Gate Design Six IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 150 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| CM200DY-24NF |
Trench Gate Design Dual IGBTMOD
|
Powerex Power Semiconductors
|
| CM75DU-12F |
Trench Gate Design Dual IGBTMOD 75 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM200DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 200 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 200 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM150DU-12F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM200DU-12F |
Trench Gate Design Dual IGBTMOD 200 Amperes/600 Volts
Trench Gate Design Dual IGBTMOD⑩ 200 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM600HU-12F |
Trench Gate Design Single IGBTMOD 600 Amperes/600 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/600 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| HER207 HER207-T3 HER207-TB HER206 HER206-T3 HER206 |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
13000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
2.0A HIGH EFFICIENCY RECTIFIER 2.0安培高速整流二极管
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
|
| XC4013E-1BG225C XC4010E-2BG225C XC4005E-4PQ100I XC |
13000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 576 CLBS, 10000 GATES, 166 MHz, PBGA225
10000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN FPGA, 400 CLBS, 7000 GATES, 125 MHz, PBGA225
5000 GATE LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
FPGA, 100 CLBS, 2000 GATES, 125 MHz, PQFP100
FPGA, 400 CLBS, 7000 GATES, 125 MHz, PQFP208
|
Xilinx, Inc.
XILINX INC
|
| M57161L-01 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
HYBRID IC FOR DRIVING TRENCH-GATE IGBT
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MA9XXXA |
Radiation Hard Advanced Gate Array Design System
|
GEC Plessey Semiconductors
|
