| PART |
Description |
Maker |
| TGA4600 TGA4600-15 |
60GHz Low Noise Amplifier
|
TriQuint Semiconductor
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| TC1201 |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
| TC1301 |
Low Noise and Medium Power GaAs FETs
|
Transcom, Inc.
|
| CHA2159 CHA2159-15 |
55-65GHz Low Noise / Medium Power Amplifier
|
United Monolithic Semic...
|
| CHA2159 |
55-65GHz Low Noise / Medium Power Amplifier
|
United Monolithic Semiconductors
|
| AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
Gain Block Amplifiers
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| BAT14-098 BAT14_98 Q62702-A0960 |
From old datasheet system
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SC5347AF-TD-E 2SC5347AE-TD-E |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
|
Sanyo Semicon Device
|
| 1N4626 1N4110 1N4620 1N4624 1N4104 1N4627 1N4099 1 |
surface mount silicon Zener diodes 表面贴装硅稳压二极管
ZFKDSA 1.5C-5.0- 6 SO BN-GN
SPC 16/ 6-ST-10,16
GMSTB 2,5/ HC/ 3-GF-7.62
LOW LEVEL ZENER DIODES LOW CURRENT: 250レA - LOW NOISE
LOW LEVEL ZENER DIODES LOW CURRENT: 250A - LOW NOISE
LOW LEVEL ZENER DIODES LOW CURRENT: 250μA - LOW NOISE
|
Microsemi, Corp.
Knox SemiconductorInc
KNOX[Knox Semiconductor, Inc]
KNOX[Knox Semiconductor Inc]
|
| BAT14-099 Q62702-A3461 BAT1499 |
RES, SMD, 18 OHM, 5%, 1/4W, RMF
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
