| PART |
Description |
Maker |
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
| TGA2576-FL-15 |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| TGF2023-2-02 TGF2023-2-02-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| TGF2023-2-05-15 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MGF0843G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0846G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MAGX-003135-SB3PPR MAGX-003135-180L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
