| PART |
Description |
Maker |
| OSV6YL56A1A |
4.8mm Straw Violet LED Superior Weather-resistance High Luminous LEDs
|
OptoSupply Internationa...
|
| OSW44E56F1A |
4.8mm Straw Pure White LED High luminous Flux LEDs Superior Weather-resistance
|
OptoSupply International
|
| IDTQS3R245 QS3R245_DS_47627 QS3R245Q |
8-Bit, 2.5 ohms Resistance Bus Switch
HIGH-SPEED CMOS QUICKSWITCH 8-BIT LOW RESISTANCE BUS SWITCH
From old datasheet system
|
IDT[Integrated Device Technology]
|
| IDTQS3R862SQ IDTQS3R862 IDTQS3R862Q QS3R862_DS_494 |
From old datasheet system
QUICKSWITCH-R PRODUCTS HIGH-SPEED CMOS 10-BIT LOW RESISTANCE BUS SWITCH WITH ACTIVE HIGH AND LOW ENABLES
|
IDT[Integrated Device Technology]
|
| OSV5YL8131A |
8mm Round Violet LED 8mm Round Standard Directivity High Luminous LEDs
|
http://
|
| IDTQS34XR800 |
QUICKSWITCH? PRODUCTS HIGH-SPEED CMOS 32-BIT LOW RESISTANCE QUICKSWITCH
|
IDT
|
| 2SK3652 |
Low on-resistance, low Qg High avalanche resistance For high-speed switching
|
TY Semiconductor Co., Ltd
|
| LC7137 LC7131 LC7136 LC7135 |
CMOS LSI PLL FREQUENCY SYNTHSIZER LSI FOR 27MHz CB TRANSCEIVERS 的CMOS大规模集成电路锁相环频率SYNTHSIZER大规模集成电路的27MHz的文件收发器
THERMISTOR, NTC, SMD; Thermistor type:NTC; Resistance:330kR; Tolerance, resistance: /-5%; Beta value:4015; Temperature, lower limit, beta value:25
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HV513 |
8-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs, POL, Hi-Z, and Short Circuit Detect
|
Supertex Inc
Supertex, Inc.
|
| OHM4048052CE003000-10.00M OHM4048052CE003000-16.38 |
OCXO, CLOCK, 10 MHz, CMOS OUTPUT ROHS COMPLIANT, RESISTANCE WELDED; DIP-14/4
OCXO, CLOCK, 16.384 MHz, CMOS OUTPUT ROHS COMPLIANT, RESISTANCE WELDED; DIP-14/4
OCXO, CLOCK, 10 MHz - 40 MHz, CMOS OUTPUT ROHS COMPLIANT, RESISTANCE WELDED; DIP-14/4
OCXO, CLOCK, 32.768 MHz, CMOS OUTPUT ROHS COMPLIANT, RESISTANCE WELDED; DIP-14/4
OCXO, CLOCK, 16 MHz, CMOS OUTPUT ROHS COMPLIANT, RESISTANCE WELDED; DIP-14/4
OCXO, CLOCK, 20 MHz, CMOS OUTPUT ROHS COMPLIANT, RESISTANCE WELDED; DIP-14/4
OCXO, CLOCK, 19.44 MHz, CMOS OUTPUT
OCXO, CLOCK, 12.8 MHz, CMOS OUTPUT
|
PLETRONICS INC
|
| MC102821504JE MC102822501JE MC102822502JE MC102822 |
High Voltage/High Resistance Precision Thick Film Surface Mount
|
Ohmite Mfg. Co.
|
|
