| PART |
Description |
Maker |
| 2N3651 2N3652 2N3650 2N3653 |
35A silicon controlled rectifier. Vrsom 300V.
35A silicon controlled rectifier. Vrsom 400V.
35A silicon controlled rectifier. Vrsom 150V.
35A silicon controlled rectifier. Vrsom 500V.
|
General Electric Solid State
|
| GBPC3501W GBPC3510W GBPC35005 GBPC35005W GBPC3501 |
600V; 35A glass passivated bridge rectifier
HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 35 Amperes)
Dual Audio Operational Amplifier 8-TSSOP -40 to 85 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
35A GLASS PASSIVATED BRIDGE RECTIFIER 35 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
Pan Jit International Inc.
DIODES[Diodes Incorporated]
Diodes, Inc.
|
| SHD125613 |
HERMETIC POWER SCHOTTKY RECTIFIER Low Forward Voltage Drop (60 V, 35A)
|
Sensitron
|
| NTE5864 NTE5889 NTE5865 |
Silicon power rectifier diode. Anode to case. Peak reverse voltage 200V. Max forward current 30A.
Silicon Power Rectifier Diode, 25 Amp
Silicon Power Rectifier Diode 25 Amp
Silicon Power Rectifier Diode / 25 Amp
|
NTE[NTE Electronics]
|
| RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| 1N2439 1N1399 1N3296 1N2431 1N2433 1N2434 1N2435 R |
Silicon Power Rectifier 125 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 125 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier 100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA
Silicon Power Rectifier
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N3161 1N3161R 1N3162 1N3162R 1N3163 1N3163R 1N316 |
Standard Rectifier (trr more than 500ns)
SILICON POWER RECTIFIER 240 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 300 A, 1000 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AB
SILICON POWER RECTIFIER 240 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| KBU3501-G KBU3502-G KBU3504-G KBU3506-G KBU3510-G |
Bridge Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=35A
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=35A
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=35A
Bridge Rectifiers, V-RRM=200V, V-DC=200V, I-(AV)=35A
Silicon Bridge Rectifiers
Bridge Rectifiers, V<sub>RRM</sub>=1000V, V<sub>DC</sub>=1000V, I<sub>(AV)</sub>=35A
Bridge Rectifiers, V-RRM=800V, V-DC=800V, I-(AV)=35A
Bridge Rectifiers, V-RRM=400V, V-DC=400V, I-(AV)=35A
|
Comchip Technology
|
| S35100 R35140 S3560 S3520 S3580 S3540 R3580 1N4137 |
Silicon Power Rectifier 70 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AB
Silicon Power Rectifier 70 A, 1400 V, SILICON, RECTIFIER DIODE, DO-203AB
Silicon Power Rectifier 70 A, 1600 V, SILICON, RECTIFIER DIODE, DO-203AB
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N1202AR JANTX1N1202A 1N3673AR 1N1202A 1N1204A 1N1 |
Standard Rectifier (trr more than 500ns)
Military Silicon Power Rectifier 12 A, 600 V, SILICON, RECTIFIER DIODE, DO-203AA
|
MICROSEMI CORP-LAWRENCE
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| HUF75321S3S FN4360 HUF75321P3 |
35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs(35A, 55V, 0.034 Ω, N沟道UltraFET功率MOS场效应管)
From old datasheet system
35A/ 55V/ 0.034 Ohm/ N-Channel UltraFET Power MOSFETs
|
Intersil Corporation
|
|
