| PART |
Description |
Maker |
| 2SC2411 |
NPN Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSS81 BSS79C BSS79B BSS81C BSS79 BSS81B |
NPN Silicon Switching Transistors
Switching Transistors - NPN Silicon Switching Transistor with high current gain
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BAS16 Q62702-F739 |
Silicon Switching Diode (For high-speed switching) 0.25 A, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RT1P137P |
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
SWITCHING SILICON PNP EPITAXIAL TRANSISTOR
|
List of Unclassifed Manufacturers
Isahaya Electronics Corporation
ETC[ETC]
|
| SMBT2907A MMBT2907A SMBT2907A/MMBT2907A |
Switching Transistors - PNP Silicon Switching Transistor with high current gain
|
INFINEON[Infineon Technologies AG]
|
| BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
| H7N0312ABNBSP H7N0312AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| H5N3007CF |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
