| PART |
Description |
Maker |
| TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLA |
2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-220AB
8 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
7 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2.5 A, 750 V, NPN, Si, POWER TRANSISTOR, TO-220AB
3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
6 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR
HIGH POWER NPN TRANSISTOR
From old datasheet system
HIGH VOLTAGE NPN POWER TRANSISTOR
8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTOR
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 3A条一（c）|26
|
NEC Corp.
NEC, Corp.
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| ASI10600 HF8-28F ASI1020 ASI10526 ASI10540 ASI1058 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| MJD44E3T4 ON2004 MJD44E3-1 MJD44 MJD44E3 |
From old datasheet system
OSCILLATOR VC-TXO 19.44MHZ SMD
NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS 10 A, 80 V, NPN, Si, POWER TRANSISTOR
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| B25-28 B2528 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
From old datasheet system
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| ASI10562 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator L BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
| ASI10633 MLN2030SS |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator L BAND, Si, NPN, RF POWER TRANSISTOR
NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| BFP650 |
Digital Transistors - NPN SiGe RF Transistor, high power amplifiers, low noise RF transistor in SOT343 Package, 4V, 150mA
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
|
