| PART |
Description |
Maker |
| BUD42D11 BUD42DT4G |
High Speed, High Gain Bipolar NPN Transistor
|
ON Semiconductor
|
| BUD43D2 BUD43D2-1 BUD43D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Transistor Integrating an Antisaturation Network and a Transient Voltage Suppression Capability
|
ON Semiconductor
|
| MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
|
ON Semiconductor
|
| IXBH16N170A IXBT16N170A |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage/ High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT24N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBH42N170 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBT10N170 IXBH10N170 |
Discrete IGBTs
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ZXTN26020DMF ZXTN26020DMFTA |
HIGH GAIN, LOW VCE(SAT) NPN BIPOLAR TRANSISTOR
|
Diodes Incorporated
|
| BC857BW BC857AW BC856BW BC857CW BC858CW BC858AW Q6 |
From old datasheet system
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-SOIC -55 to 125
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125
|
http://
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
