| PART |
Description |
Maker |
| BUK9506-55B |
(BUK9x06-55B) N-channel TrenchMOSTM logic level FET
|
NXP
|
| BUK9E06-55B BUK9506-55B BUK9606-55B |
N-channel TrenchMOSTM logic level FET N沟道场效应晶体管逻辑电平TrenchMOSTM
N-channel TrenchMOS(tm) logic level FET
|
Electronic Theatre Controls, Inc.
ETC[ETC]
PHILIPS
List of Unclassifed Manufacturers
|
| KUK7109-75ATE |
TrenchMOSTM standard level FET
|
Guangdong Kexin Industrial Co.,Ltd
|
| KUK7607-55B |
TrenchMOSTM standard level FET
|
Guangdong Kexin Industrial Co.,Ltd
|
| KUK7606-75B |
TrenchMOSTM standard level FET
|
Guangdong Kexin Industrial Co.,Ltd
|
| KUK7604-40A |
TrenchMOSTM standard level FET
|
Guangdong Kexin Industrial Co.,Ltd
|
| PH8230E |
N-channel Trenchmos (tm) enhanced logic level FET
N-CHANNEL TRENCHMOSTM ENHANCED LOGIC LEVEL FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET
Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
| 3N191 X3N190-91 3N190 3N190-91 X3N191 |
50 mA, 40 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
30V N-Channel PowerTrench MOSFET
Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
|
Calogic LLC
Calogic LLC
CALOGIC[Calogic, LLC]
|
| AK4628 AK4628VQ |
2-channel 96KHz ADC 8-channel 192KHz DAC
HIGH PERFORMANCE MULTI CHANNEL AUDIO CODEC
|
AKM[Asahi Kasei Microsystems]
|
