| PART |
Description |
Maker |
| BUK563-48C |
PowerMOS transistor Voltage clamped logic level FET 21 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| MGP20N40CL_D ON1864 MGP20N40CL |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
From old datasheet system
20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT V ce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED)
|
ONSEMI[ON Semiconductor]
|
| STGB20NB37LZ |
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED POWERMESH IGBT
|
ST Microelectronics
|
| STGB10NB37LZ |
N-Channel Clamped 10A-D2PAK Internally Clamped PowerMESHTM IGBT(N沟道绝缘栅双极晶体管) N通道钳位10A条，采用D2PAK内部钳位PowerMESHTM IGBT的（不适用沟道绝缘栅双极晶体管
|
STMicroelectronics N.V.
|
| STGB7NB40LZ |
N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH⑩ IGBT
N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| BUK101-50GL_1 BUK101-50GL BUK101-50GL/B |
TRANSISTOR TO 220 TOPFET 5POLIG
PowerMOS transistor
From old datasheet system
|
NXP Semiconductors
|
| STGB20NB32LZ STGB20NB32LZ-1 |
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH IGBT
|
ST Microelectronics
STMicroelectronics
|
| BUK100-50GS |
PowerMOS transistor TOPFET
PowerMOS transistor TOPFET(功率MOS晶体管逻辑电平TOPFET)
|
NXP Semiconductors
Philips Semiconductors
|
| BUK455-60H |
PowerMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
