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BS829 - DMOS Transistors (P-Channel)(P???DMOS?朵?绠?

BS829_1220569.PDF Datasheet


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BS829 DMOS Transistors (P-Channel)(P???DMOS?朵?绠?
GE Security, Inc.
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GE[General Semiconductor]
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STN4822 STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
Stanson Technology
STP4931 STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Stanson Technology
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