| PART |
Description |
Maker |
| BLL1214-250 |
L-band radar LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLS6G3135-20 BLS6G3135S-20 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors
|
| BLS7G2729L-350P BLS7G2729LS-350P |
LDMOS S-Band radar power transistor BLS7G2729LS-350P<SOT539B (SOT539B)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLS7G2730L-200P BLS7G2730L-200P-15 |
LDMOS S-band radar power transistor
|
NXP Semiconductors
|
| HVV1214-075 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200レs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| 0910-300M |
Bipolar/LDMOS Transistor
300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| AM82731-012 2767 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
From old datasheet system
RF & Microwave Transistors S-Band Radar Applications(用于S波段雷达脉冲输出和驱动的RF和微波晶体管)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| AM82731-006 2884 |
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| AM83135-010 2710 |
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Black; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061, CSA Type AWM; Conductor Material:Copper RoHS Compliant: Yes
From old datasheet system
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier
CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
| AM80814-005 |
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲驱动的RF和微波晶体管)
L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMicroelectronics
SGS Thomson Microelectronics
|
