| PART |
Description |
Maker |
| BLF900S-110 BLF900-110 |
Base station LDMOS transistors UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor
100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
| BLF6G27L-50BN BLF6G27LS-50BN |
50 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor BLF6G27L-50BN<SOT1112A (CDFM6)|<<http://www.nxp.com/packages/SOT1112A.html<1<Always Pb-free,;BLF6G27L-50BN<SOT1112A (CDFM6)|<<http://www.nxp.com/packages/SOT1112A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| SY3120-5LOU-C4-Q SY3120-5LOU-C6-Q SS5Y7-42-04-C10F |
VALVEBODY24VDC
MANIFOLD 4STATION
MANIFOLD 6STATION
MANIFOLD 6 STATION
MANIFOLD 5STATION
MANIFOLD 8 STATION
MANIFOLD 4 STATION
MANIFOLD 7 STATION
MANIFOLD 5 STATION
MANIFOLD 3 STATION
MANIFOLD 3STATION
MANIFOLD 7STATION
分水6
VALVE BODY 24VDC 阀4Vdc
VALVE BASE 24VDC 阀4Vdc
High Efficient Rectifier Diodes 阀4Vdc
MANIFOLD 8STATION 分水STATION
|
Actel, Corp.
SIEMENS AG
TE Connectivity, Ltd.
Prosperity Dielectrics Co., Ltd.
|
| SD1390 |
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS
|
ST Microelectronics
|
| SD1391 |
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS
|
ST Microelectronics
|
| SD1420-01 |
RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS
|
ADPOW[Advanced Power Technology]
|
| BLM6G22-30 BLM6G22-30G |
Product description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).
|
NXP Semiconductors N.V.
|
| BLF6G27LS-135 BLF6G27-135 |
Product description135 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;BLF6G27LS-135<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BCAH180-300H-D BCAH045-285-V |
28250 MHz - 31300 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 18 dBi GAIN, 180 deg 3dB BEAMWIDTH
26350 MHz - 28500 MHz BASE STATION/BROADCAST TRANSMISSION ANTENNA, 23.8 dBi GAIN
|
ANDREW CORP
|
| 838-IF75.0M-F |
Base Station & Repeater
|
Oscilent Corporation
|
