PART |
Description |
Maker |
BF996S |
N-channel dual-gate MOS-FET
|
NXP Semiconductors Philips Semiconductors
|
BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
3SK186 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi Semiconductor
|
BF908WR BF908WR_1 |
N-channel dual-gate MOS-FET From old datasheet system
|
Philips
|
BF1205C |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
BF1205 |
Dual N-channel dual gate MOS-FET
|
NXP Semiconductors
|
BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管,耗尽 N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode From old datasheet system
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. Vishay Telefunken VISAY[Vishay Siliconix]
|
3SK317 |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Hitachi Semiconductor
|
3SK296ZQ-TL-E |
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET LEAD FREE, SC-82A, CMPAK-4 Silicon N-Channel Dual Gate MOS FET
|
Renesas Electronics Corporation
|
BF991 BF991-2015 |
N-channel dual-gate MOS-FET N-channel dual-gate MOSFET
|
Quanzhou Jinmei Electronic ... NXP Semiconductors
|