| PART |
Description |
Maker |
| BF120210 BF1202.215 |
N-channel dual-gate PoLo MOS-FETs
N-channel dual-gate PoLo MOS-FETs
|
NXP Semiconductors
|
| BF1100 BF1100R |
Dual-gate MOS-FETs
|
PHILIPS[Philips Semiconductors]
|
| BF908R BF908 BF908-R_2 |
Dual-gate MOS-FETs
From old datasheet system
|
Philips
|
| BF1107 BF1107W BF1107_1107W_3 |
From old datasheet system
N-channel single gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF904 BF904R BF90407 BF904-2015 |
N-channel dual gate MOS-FETs
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
| BF1102R BF1102 BF110200 BF1102-15 BF1102-2015 |
Dual N-channel dual gate MOS-FETs
|
NXP Semiconductors
Philips
Quanzhou Jinmei Electro...
|
| BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| BF964 BF964S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
Vishay Siliconix
|
| 2SJ0536 |
Small-signal device - Small-signal FETs - MOS FETs
Silicon MOS FETs (Small Signal)
SMini3-G1
From old datasheet system
|
Matsshita / Panasonic
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
| BF1203 BF1203-2015 |
Dual N-channel dual gate MOS-FET
|
Quanzhou Jinmei Electro...
NXP Semiconductors
|
