| PART |
Description |
Maker |
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| BB135 |
UHF Variable Capacitance Diode
|
Leshan Radio Company
|
| BB179B |
UHF variable capacitance diode
|
Philipss
|
| BB135 |
UHF variable capacitance diode
|
Philips Semiconductors
|
| BB14904 |
UHF variable capacitance diode
|
NXP Semiconductors
|
| BB149A-15 BB149A-2015 |
UHF variable capacitance diode
|
Quanzhou Jinmei Electro...
|
| BB179B |
UHF variable capacitance diode
|
PHILIPS[Philips Semiconductors]
|
| 1SV239 |
VARIABLE CAPACITANCE DIODE (VCO FOR UHF RADIO)
|
TOSHIBA[Toshiba Semiconductor]
|
