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B72735D0050H062 - CeraDiode SMD type, array, case size 1012

B72735D0050H062_1216314.PDF Datasheet


 Full text search : CeraDiode SMD type, array, case size 1012
 Product Description search : CeraDiode SMD type, array, case size 1012


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PART Description Maker
B72735D0050H062 CeraDiode SMD type, array, case size 1012
EPCOS[EPCOS]
CDA5C20GTA B72714D0200A060 B72724D0200A062 CDA4C20 CeraDiode SMD type, array, case size 0508, 0612
EPCOS[EPCOS]
DBLS159G DBL151G DBL152G DBL153G DBL154G DBL155G D Bridge: Standard
LED ARRAY AMBER .56 X .56 SMD
LED ARRAY GREEN .56 X .56 SMD
LED ARRAY RD/GRN/BLU .56X.56 SMD 单相1.5安培。玻璃钝化整流桥
Single Phase 1.5 AMPS. Glass Passivated Bridge Rectifiers 单相1.5安培。玻璃钝化整流桥
LED ARRAY BLUE .56 X .56 SMD 单相1.5安培。玻璃钝化整流桥
TSC[Taiwan Semiconductor Company, Ltd]
Taiwan Semiconductor Co., Ltd.
28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28L    3.3V 1 Megabit (128K x 8-Bit) EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM
CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL
CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C);
CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C);
Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes
CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
Maxwell Technologies, Inc
02-0274-0100 01-0109-0100 01-0109-01SD CAS-2000 Comprehensive Application System
JDS Uniphase Corporation
KMM5361205C2WG KMM5361205C2W 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
KMM5362205C2W KMM5362205C2WG 2M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
SAMSUNG SEMICONDUCTOR CO. LTD.
KMM5362203C2W 2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
Samsung Semiconductor
BLA2ABB220SN4D BLA2ABB221SN4D BLA2AAG601SN4D BLA2A FERRITE ARRAY 220 OHM 0804 SMD 4 FUNCTIONS, 0.05 A, FERRITE CHIP
4 FUNCTIONS, 0.2 A, FERRITE CHIP EIA STD PACKAGE SIZE 0804, 8 PIN
FERRITE ARRAY 600 OHM 0804 SMD
Murata Manufacturing Co., Ltd.
MURATA MANUFACTURING CO LTD
KM44C4005C KM44C4105C KM44C4005CK-6 KM44C4105CK-6 4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns
Samsung Electronic
KMM5364005CK (KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
Samsung Semiconductor
 
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