| PART |
Description |
Maker |
| MX29F001TTC-90 MX29F001TTC-70 MX29F001TTC-12 MX29F |
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 55 ns, PDSO32
x8 Flash EEPROM x8闪存EEPROM
|
Macronix International Co., Ltd.
|
| AT49F2048 AT49F2048-12RC AT49F2048-12RI AT49F2048- |
2-Megabit 128K x 16 5-volt Only CMOS Flash Memory 128K X 16 FLASH 5V PROM, 120 ns, PDSO44
Serial-To-Parallel Interface 20-TSSOP -40 to 85 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
Dual 16-Bit Binary Counters with 3-State Output Registers 20-PDIP -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| CAT28F010NI-12T CAT28F010TI-90T CAT28F010TI-12T CA |
1 Megabit CMOS Flash Memory
128K X 8 FLASH 12V PROM, 90 ns, PDSO32
Bulk Erase Flash Memory, 1Mb
128K X 8 FLASH 12V PROM, 90 ns, PDIP32
|
http://
CATALYST[Catalyst Semiconductor]
ON SEMICONDUCTOR
|
| AS8F128K32Q-150/Q AS8F128K32Q-70/Q AS8F128K32Q-70/ |
128K x 32 FLASH FLASH MEMORY ARRAY 128K X 32 FLASH 5V PROM MODULE, 150 ns, CQFP68
128K x 32 FLASH FLASH MEMORY ARRAY 128K X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68
128K x 32 FLASH FLASH MEMORY ARRAY 128K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68
|
Austin Semiconductor, Inc
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| W29EE011P-90 W29EE011P-15 W29EE011T-15 |
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
KJA SERIES III
128K X 8 CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
128K X 8 CMOS FLASH MEMORY 128K的8的CMOS闪存
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| IS28F010-45PL IS28F010-45PLI IS28F010-45T IS28F010 |
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDSO32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PQCC32
131,072 x 8 CMOS FLASH MEMORY 128K X 8 FLASH 12V PROM, 45 ns, PDIP32
|
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| ULQ2801A ULQ2802A ULQ2803A ULQ2804A ULQ2805A |
Flash - NOR IC; Memory Type:Flash; Access Time, Tacc:100ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:56-TSOP; Memory Configuration:128K x 16; Memory Size:256MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 八达林顿阵列
EIGHT DARLINGTON ARRAYS
|
STMicroelectronics N.V.
Allegro MicroSystems
STMICROELECTRONICS[STMicroelectronics]
|
| AB28F200BR-T80 A28F200BR-TB A28F200BR-B AB28F200BR |
2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
JT 42C 42#22 PIN RECP
2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K X 16/ 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
2-Mbit (128K x 16, 256K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corp.
|
| MX29F200CBMI-70G MX29F200CBMI-90 MX29F200CBTI-70G |
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 90 ns, PDSO44
2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
