| PART |
Description |
Maker |
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| UPD42S4170AG5M-70 UPD424170AV-70 UPD424170LG5M-A70 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40 0.300 INCH, PLASTIC, REVERSE, TSOP2-44/40
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 0.400 INCH, PLASTIC, ZIP-40
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
|
Infineon Technologies AG
|
| IBM025170NT3B-70 IBM025161LG5B-70 |
256K X 16 VIDEO DRAM, 70 ns, PDSO70 0.400 INCH, TSOP-70
256K X 16 VIDEO DRAM, 70 ns, PDSO64
|
Honeywell International, Inc.
|
| KM44C258BJ-8 KM44C258BP-8 KM44C258BP-7 KM44C258BZ- |
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 70 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 80 ns, PZIP19
|
|
| MT4C16257 |
256K x 16 FPM DRAM(256K x 16快速页面模式动态RAM)
|
Micron Technology, Inc.
|
| V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL-VITELIC
|
| KM44C258CP-6 KM44C258CJ-6 KM44C258CJ-8 KM44C258CP- |
256K X 4 STATIC COLUMN DRAM, 60 ns, PDIP20
256K X 4 STATIC COLUMN DRAM, 60 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDSO20
256K X 4 STATIC COLUMN DRAM, 80 ns, PDIP20
|
|
| AS4C256K16E0-30JC AS4C256K16E0-35JC |
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 30 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 256K X 16 EDO DRAM, 35 ns, PDSO40
5V 256Kx16 CMOS DRAM (EDO) 5V56Kx16的CMOS的DRAM（江户）
|
Alliance Semiconductor, Corp.
|
| P21464 |
256K DRAM
|
Intel
|
| MT4C16256 |
256K x 16 DRAM (MT4C16256/7/8/9)
|
Micron Technology
|
| MCM51L4256B |
256K x 4 CMOS DRAM
|
Motorola
|
| MCM94256 |
256K x 9-Bit DRAM Module
|
Motorola
|
|
